化合物レーザーをシリコンにモノリシック集積する試み（前編）：福田昭のデバイス通信（166） imecが語る最新のシリコンフォトニクス技術（26）（2/2 ページ） - EE Times Japan
A) Conventional aspect ratio trapping method with III–V epitaxial... | Download Scientific Diagram
Gas aspect ratio normalized by the trap aspect ratio, κ/λ, as a... | Download Scientific Diagram
![PDF] GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/bf2104a238e0868597079bd0e9cc516b4d452449/4-Figure3-1.png "PDF] GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction | Semantic Scholar")
PDF] GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction | Semantic Scholar
GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction
Aspect ratio trapping heteroepitaxy for integration of germanium and compound semiconductors on silicon | Semantic Scholar
FinFETs' III-V future promises sub-7nm, RF and opto CMOS
Micromachines | Free Full-Text | Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching
Aspect ratio trapping heteroepitaxy for integration of germanium and compound semiconductors on silicon | Semantic Scholar
Hollow Plasmonic U‐Cavities with High‐Aspect‐Ratio Nanofins Sustaining Strong Optical Vortices for Light Trapping and Sensing - Ho - 2014 - Advanced Optical Materials - Wiley Online Library
The wavelength-dependent plasmonic trapping potential tunability for... | Download Scientific Diagram
Copper- and chloride-mediated synthesis and optoelectronic trapping of ultra-high aspect ratio palladium nanowires - Journal of Materials Chemistry A (RSC Publishing)
2008 IEDM presentation | PPT
Aspect ratio trapping heteroepitaxy for integration of germanium and compound semiconductors on silicon
PTC Website
US8173551B2 - Defect reduction using aspect ratio trapping - Google Patents
Schematic diagrams of Ge on Si Esaki diode via aspect ratio trapping... | Download Scientific Diagram
A) Conventional aspect ratio trapping method with III–V epitaxial... | Download Scientific Diagram
Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
Figure 1 from Defect formation in III–V fin grown by aspect ratio trapping technique: A first-principles study | Semantic Scholar
Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS
Schematic diagrams of Ge on Si Esaki diode via aspect ratio trapping... | Download Scientific Diagram
